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Journals S. K. Wang,H. G. Liu, A. Toriumi "Kinetic Study of GeO Disproportionation into GeO2/Ge System Using X-ray Photoelectron Spectroscopy " Appl. Phys. Lett.101, 061907 (2012).
H. D. Chang, B. Sun, L. Lu, W. Zhao,S. K. Wang,W. X. Wang,H. G. Liu "Study on high mobility In0:6Ga0:4As channel MOSHEMT and MOSFET" Acta Phys. Sin.61, 217304 (2012).
S. K. Wang,H.G.Liu,K.Kita,T.Nishimura,K.Nagashio,A.Toriumi "Investigations on GeO disproportionation using X-ray photoelectron spectroscopy " ECS Trans. 50, (2012)
Y.Li,S.K. Wang, B.Sun, H.Chang, W.Zhao, X.Zhang,and H.Liu. "Room temperature wafer bonding by surface activated ALD- Al2O3 " ECS Trans. 50, (2012)
S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction " Jpn. J. Appl. Phys. 50, 10PE04 (2011).Spotlight Paper
S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O " Jpn. J. Appl. Phys. 50, 04DA01 (2011).
S.K. Wang, K.Kita, C.H. Lee, T. Tabata, T.Nishimura, K. Nagashio and A.Toriumi, "Desorption kinetics of GeO from GeO2/Ge structure", J. Appl. Phys. 108, 054104 (2010).
A.Toriumi,C.H. Lee, T. Nishimura, S.K. Wang,K. Kita, and K. Nagashio, "Recent progress of Ge technology for a post-Si CMOS " ECS Trans., 35 (3), 443 (2011).
A.Toriumi, C.H. Lee, T. Nishimura, K. Kita, S.K. Wang, M. Yoshida, and K. Nagashio, "Feasibility of Ge CMOS for beyond Si-CMOS " ECS Trans., 33 (6), pp.33-46 (2010).
A.Toriumi, S.K. Wang, C.H. Lee, M. Yoshida, K. Kita, T. Nishimura and K. Nagashio, "Oxidation, Diffusion and Desorption in Ge/GeO2 System" ECS Trans., 28 (2), pp.171-180 (2010).
L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang and A. Toriumi, "Interfacial Dipole at High-k Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics" Jpn. J. Appl. Phys. 50, 031502 (2011)
L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang and A. Toriumi, "Observation of Dipole Layer Formed at High-k dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy " Applied Physics Express, 3 (2010) 061501 ------------------------------------------------------------------------------------------------------- International Conferences S. K. Wang, H.G.Liu, K.Kita, T.Nishimura,K.Nagashio, A.Toriumi, "Investigations on GeO disproportionation using X-ray photoelectron spectroscopy" 222th ECS Meeting. (Oct. 2012, Honolulu)*.
S.K. Wang,B.Xue,H.Liang,Z.Mei,Y.Li,W.Zhao,B.Sun,X.Du,H.Liu "Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy" Int. conf. on Solid State Devices and Materials(SSDM2012), (Sep 2012,Kyoto)*.
S.K. Wang,B.Xue,H.Liang,Z.Mei,Y.Li,W.Zhao,B.Sun,X.Du,H.Liu "Comprehensive study of interface passivation in Ge-MOSFETs -Control the interfacial layer for high performance devices- " Int. Conf. on Solid-State and IC Tech.(2012), (ICSICT2012), (Oct 2012,Xi'an)*.
Y. Li, S. K. Wang,B.Sun, H.Chang,W. Zhao,X.Zhang,H. Liu. "Room temperature wafer bonding by surface activated ALD- Al2O3" 222th ECS Meeting. (Oct. 2012, Honolulu)*.
B.Q. Xue,S.K. Wang, H.D. Chang, B.Sun, W.Zhao, H.G. Liu, "Impact of HCl and (NH4)2S surface treatment in Ge MOSFETs " 43th IEEE Semiconductor Interface Specialists Conference International(SISC2012) （Dec. 2012, San Diego)*
H. Chen, S.K. Wang,B.Sun, H.Guo, W.Zhao, X.Zhang, H.G. Liu "Backside Reflector using Metallic Mirror and ALD-TiO2/Al2O3 DBR for GaN-Based LED" Int. Conf. on Solid-State and IC Tech.(2012), (ICSICT2012), (Oct 2012,Xi'an)*.
K. Kita, S. K. Wang,T.Tabata,C.H.Lee,T.Nishimura,K.Nagashio,A. Toriumi "Control of Ge/High-k Interface for Ge CMOS Technology" Invited, 39th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-39), (Jan. 25, 2012, Santa Fe)
S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "Oxygen Vacancy Formation, Diffusion and GeO desorption in GeO2/Ge Stack 42th IEEE Semiconductor Interface Specialists Conference International(SISC2011)
S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "Interfacial Reaction Induced GeO Desorption, GeO2 Crystallization and Non-uniform Void Formation in GeO2/Ge Stack" 2011 Materials Research Society Spring Meeting (April 2011, San Francisco).
S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction" 2011 International Workshop on Dielectric Thin Film for Future ULSI Devices:Science and Technology (IWDTF2011), (Jan. 2011, Tokyo)
C. H. Lee, T. Nishimura, T. Tabata, S. Wang, K. Nagashio, K. Kita, A. Toriumi "Ge MOSFETs Performance: Impact of Ge Interface Passivation" 2010IEEE International Electron Device Meeting(IEDM),(Dec.2010,San Francisco).
S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "Crystallization of thick amorphous GeO2 on Ge to -quartz structure -Experimental evidence and crystallization model- " 41th IEEE Semiconductor Interface Specialists Conference International(SISC2010) （Dec. 2010, San Diego)
A. Toriumi, C. Lee, T. Nishimura, K. Kita, S. Wang, M. Yoshida, and K. Nagashio "Feasibility of Ge CMOS for beyond Si-CMOS" 218th The Electrochemical Society Meeting,(Oct 2010, Las Vegas)(Invited)
S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "GeO Desorption Mechanism from GeO2/Ge Stack Determined by 73Ge Labeling Technique in Thermal Desorption Spectroscopy (TDS) Analysis" Int. conf. on Solid State Devices and Materials(SSDM2010), (Sep 2010,Tokyo)
C. H. Lee, T. Nishimura, T. Tabata, S. Wang, K. Nagashio, K. Kita, A. Toriumi "Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation", Int. conf. on Solid State Devices and Materials(SSDM2010), (Sep 2010,Tokyo)
T. Nishimura, C. H. Lee, S. K. Wang, T. Tabata, K. Kita, K. Nagashio and A. Toriumi "Electron Mobility in High-k Ge-MISFETs Goes Up to Higher", 2010 Symposium on VLSI Technology, (June 2010, Honolulu)
A. Toriumi, S. Wang, C. Lee, M. Yoshida, K. Kita, T. Nishimura and K. Nagashio, "Oxidation, Diffusion and Desorption in Ge/GeO2 System", 217th The Electrochemical Society Meeting,(April 2010, Vancouver)(Invited)
K.Kita, S.K. Wang, M. Yoshida, C.H. Lee, K. Nagashio, T.Nishimura and A.Toriumi, "Comprehensive Study of GeO2 Oxidation, GeO Desorption and GeO2- Metal Interaction . Understanding of Ge Processing Kinetics for Perfect Interface Control-" 2009IEEE International Electron Device Meeting(IEDM),(Dec.2009,Baltimore).
S.K. Wang, K. Kita, C.H. Lee, T. Tabata, K. Nagashio, T. Nishimura and A. Toriumi, "Kinetic Study of GeO Desorption from Ge/GeO2 system", 40th IEEE Semiconductor Interface Specialists Conference International(SISC2009) （Dec. 2009, Arlington)
S. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi, "18O isotope tracing of GeO Desorption from GeO2/Ge Structure" Int. conf. on Solid State Devices and Materials(SSDM2009), (October 2009,Sendai)
L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang and A. Toriumi, "X-ray photoelectron spectroscopy study of dipole effects at HfO2/SiO2/Si stacks" Int. conf. on Solid State Devices and Materials(SSDM2009), (October 2009,Sendai) ------------------------------------------------------------------------------------------------------- Domestic Conference 喜多浩之, 王 盛凱, 李 忠賢, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海 明
S.K. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi, "observation of active oxidation of germanium in low pressure oxygen annealing", 57th JSAP Spring Meeting, (March 2010, Hiratsuka)
S.K. Wang, K. Kita, T. Tabata, K. Nagashio, T. Nishimura and A. Toriumi, "Analysis of GeO desorption from Ge/GeO2 by using TDS", 15th Workshop on Gate Stack Technology and Physics (Jan. 2010, Mishima)
L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang and A. Toriumi, "X-ray Photoelectron Spectroscopy Study of Dipole Effects at High-k/SiO2 Interface", 15th Workshop on Gate Stack Technology and Physics (Jan. 2010, Mishima)
S.K. Wang, K. Kita, T. Nishimura, K. Nagashio and A.Toriumi, "TDS study on activation energy of GeO desorption fromGeO2/Ge structure", 70th JSAP Autumn Meeting, (September 2009, Toyama) ------------------------------------------------------------------------------------------------------- Others S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi "Crystallization of thick amorphous GeO2 on Ge to -quartz structure" 5th UT-SNU-TU Student workshop, (October 2010, Seoul)
S.K. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi, "Desorption mechanism of GeO from GeO2/Ge system", The 4th Global-COE RA workshop, (June, 2010, Niigata)
S.K. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi, "The Reaction of Oxygen with Ge(100) -GeO Desorption, Active Oxidation and Transition to Passive Oxidation-", 2010 University of Tokyo- Tsinghua University Student Workshop, (May, 2010, Tokyo)
S.K. Wang, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi, "On the desorption of GeO from nanoscale GeO2/Ge system", 5th UT-SNU-TU Student workshop, (October 2009, Beijing) |
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